Structural enhancement of ZnO on SiO2 for photonic applications

Structural enhancement of ZnO on SiO2 for photonic applications

Blog Article

Multi-layer thin films are often the basis of photonic devices.Zinc oxide (ZnO) with its excellent optoelectronic properties can serve as a high quality emitter in structures like microdisks or photonic stuart products emcelle tocopherol crystals.Here, we present a detailed study on the enhancement of the structural properties of low-temperature MBE grown ZnO on silica (SiO2).

By thermal annealing a grain coalescence of the initially polycrystalline layer leads to an enhancement of the electronic structure, indicated by a blue shift of the photoluminescence (PL) signal maximum.Oxygen atmosphere during the annealing process prevents the creation of intrinsic defects by out-diffusion.Pre-annealing deposited SiO2 capping layers instead obstruct ivoryjinelle.com the recrystallization and lead to less intense emission.

While thin capping layers partially detach from the ZnO film at high temperatures and cause higher surface roughness and the weakest emission, thicker layers remain smoother and exhibit a significantly stronger photoluminescence.